Fuji 2MBI200U4B‑120‑50

Fuji 2MBI200U4B‑120‑50

Overview

This IGBT module is used in industrial power electronics to control and switch high-voltage and high-current loads with efficiency and reliability.

Key Features

• Supports efficient switching in high-power circuits
• Designed for integration into industrial inverter and drive systems
• Provides reliable thermal and electrical performance
• Suitable for continuous-duty industrial environments

Technical Specifications

• Part Number: 2MBI200U4B‑120‑50
• Configuration: Dual IGBT with free-wheeling diodes
• Continuous Current: 200 A
• Collector-Emitter Voltage: 1200 V
• VCE(sat): ~2.1 V @ rated current
• Gate-Emitter Voltage: ±20 V
• Thermal Resistance (Junction–Case): ~0.18 °C/W
• Switching Speed: Fast (trench-gate optimized)
• Mounting Style: Chassis mount with insulated base
• Operating Temp Range: –40 °C to +150 °C
• Package Format: Power module
• Weight: ~300 g

Applications

• Industrial inverters and motor drives
• Power conversion and switching systems
• Energy control and distribution equipment
• Maintenance and replacement in power electronic assemblies

Why Choose the 2MBI200U4B-120-50

• Supports stable switching performance in high-power applications
• A practical choice for replacement or system integration projects
• Suitable for continuous operation in industrial power systems
• Designed for integration into Fuji Electric power semiconductor assemblies

Order Now

The Fuji 2MBI200U4B‑120‑50 IGBT module is available and ships worldwide.